nucВестник НЯЦ РКNNC RK Bulletin1729-75161729-7885Национальный ядерный центр Республики Казахстан10.52676/1729-7885-2026-3-5-14nuc-1011Research ArticleСтатьиОБЗОР: ЭЛЕКТРИЧЕСКИЕ СВОЙСТВА КОМПОЗИТНЫХ МАТЕРИАЛОВ НА ОСНОВЕ КАРБИДА КРЕМНИЯREVIEW: ELECTRICAL PROPERTIES OF SILICON CARBIDE-BASED COMPOSITE MATERIALShttps://orcid.org/0009-0000-8433-6414ГамидоваС. Н.HamidovaS. N.

Севиндж Натиг Гамидова

Баку

 

Sevinj Natiq Hamidova

Baku

hamidova.sevinc.natiq@bsu.edu.azМамедовВ. У.MammadovV. U.

Вюсал Усуб Мамедов

Баку

Name Vusal Usub Mammadov

Baku

vusalmammadov@bsu.edu.azБакинский государственный университетАзербайджанBaku State UniversityAzerbaijan20261610202603514Copyright © Гамидова С.Н., Мамедов В.У., 20262026Гамидова С.Н., Мамедов В.У.Hamidova S.N., Mammadov V.U.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://journals.nnc.kz/jour/article/view/1011

Данный обзор посвящён кросс-масштабному анализу электронного транспорта и диэлектрических потерь в системах на основе карбида кремния; также рассмотрены три основные формы кристалла: 4H-SiC, 6H-SiC и 3C-SiC. Лучшим для мощных устройств считается 4H-SiC. Главная проблема – это дефекты на границе SiC и оксида кремния (SiO₂), которые снижают проводимость транзисторов. Также сложно создавать качественные контакты для p-типа и обеспечивать стабильность при длительной работе. На наноуровне SiC используется в квантовых вычислениях и датчиках. В композитах с металлами и полимерами SiC используется для поглощения электромагнитных волн и теплоотвода. Нейросети помогают автоматически выявлять дефекты на пластинах диаметром 200 мм. Главный вывод: будущее SiC-технологий не в улучшении самого кристалла, а в точном контроле его поверхностей и границ.

Silicon carbide (SiC) is a wide-bandgap semiconductor that is widely used in power electronics, automotive industries, and aerospace applications due to its high thermal conductivity and breakdown field. This review examines both the fundamental physics and the practical applications of SiC. We analyze its major crystal structures (polytypes), specifically 4H-SiC, 6H-SiC, and 3C-SiC, and discuss how these structures affect electrical performance. The paper also covers new developments in SiC functional ceramics, metal-matrix nanocomposites, and quantum defects used for quantum information science. By analyzing research literature from 2006 to 2026, we show how the industry transitioned from basic crystal growth to 8-inch wafer manufacturing and automated defect classification using neural networks. Finally, this review discusses the main technical problems that still limit SiC devices, such as high interface trap density (Dit), high contact resistance in p-type doping, and bias temperature instability (BTI). By comparing theoretical material properties with real device performance, this paper identifies key research priorities for the next generation of semiconductor technology.

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The authors declare that there are no conflicts of interest present.