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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">nuc</journal-id><journal-title-group><journal-title xml:lang="ru">Вестник НЯЦ РК</journal-title><trans-title-group xml:lang="en"><trans-title>NNC RK Bulletin</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7516</issn><issn pub-type="epub">1729-7885</issn><publisher><publisher-name>Национальный ядерный центр Республики Казахстан</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.52676/1729-7885-2026-2-185-190</article-id><article-id custom-type="elpub" pub-id-type="custom">nuc-1039</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ВЛИЯНИЕ ВЛАЖНОГО ХИМИЧЕСКОГО ТРАВЛЕНИЯ НА УДАЛЕНИЕ ПРИМЕСЕЙ И ФОТОКАТАЛИТИЧЕСКИЕ ХАРАКТЕРИСТИКИ МЕТАЛЛУРГИЧЕСКОГО КРЕМНИЕВОГО ПОРОШКА</article-title><trans-title-group xml:lang="en"><trans-title>EFFECT OF WET CHEMICAL ETCHING ON IMPURITY REMOVAL AND PHOTOCATALYTIC PERFORMANCE OF METALLURGICAL SILICON POWDER</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0004-8655-0966</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Серикбеков</surname><given-names>А. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Serikbekov</surname><given-names>A. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алимжан Серикбеков – магистр, младший научный сотрудник, Лаборатория фотоэлектрических явлений и приборов </p><p>Алматы</p></bio><bio xml:lang="en"><p>Physical-Technical Institute, Laboratory of Photoelectric Phenomena and Devices; KazNU, Faculty of Physics and Technology</p><p>Almaty</p></bio><email xlink:type="simple">alimzhan.serikbekov2002@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-6817-9586</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Серикканов</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Serikkanov</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Абай Серикканов – кандидат физ.-мат.наук, профессор, вице-президент</p><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><email xlink:type="simple">a.serikkanov.nas@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1177-1244</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мусабек</surname><given-names>Г. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Musabek</surname><given-names>G. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Гаухар Мусабек – PhD, ассоциированный профессор, Физико-технический факультет</p><p>Алматы</p></bio><bio xml:lang="en"><p>Faculty of Physics and Technology</p><p>Almaty</p></bio><email xlink:type="simple">gauharmussabek@gmail.com</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-0793-9905</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бакранова</surname><given-names>Д. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Bakranova</surname><given-names>D. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Дина Игоревна Бакранова – PhD, ассоциированный профессор SDU University, Школа информационных технологий и прикладной математики</p><p>Каскелен</p></bio><bio xml:lang="en"><p>School of Information Technology and Applied Mathematics</p><p> Kaskelen</p></bio><email xlink:type="simple">dinabakranova@gmail.com</email><xref ref-type="aff" rid="aff-4"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>ТОО «Физико-технический институт»; &#13;
Казахский Национальный Университет им. Аль-Фараби</institution><country>Казахстан</country></aff><aff xml:lang="en"><institution>Physical-Technical Institute; &#13;
Al-Farabi Kazakh National university</institution><country>Kazakhstan</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Национальная академия наук Республики Казахстан при Президенте Республики Казахстан,</institution><country>Казахстан</country></aff><aff xml:lang="en"><institution>National Academy of Sciences of the Republic of Kazakhstan under the President of the Republic of Kazakhstan</institution><country>Kazakhstan</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Казахский Национальный Университет им. Аль-Фараби</institution><country>Казахстан</country></aff><aff xml:lang="en"><institution>Al-Farabi Kazakh National university</institution><country>Kazakhstan</country></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>SDU University</institution><country>Казахстан</country></aff><aff xml:lang="en"><institution>SDU University</institution><country>Kazakhstan</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>09</day><month>08</month><year>2026</year></pub-date><volume>0</volume><issue>2</issue><fpage>185</fpage><lpage>190</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Серикбеков А.М., Серикканов А.С., Мусабек Г.К., Бакранова Д.И., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Серикбеков А.М., Серикканов А.С., Мусабек Г.К., Бакранова Д.И.</copyright-holder><copyright-holder xml:lang="en">Serikbekov A.M., Serikkanov A.S., Musabek G.K., Bakranova D.I.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://journals.nnc.kz/jour/article/view/1039">https://journals.nnc.kz/jour/article/view/1039</self-uri><abstract><p>В данном исследовании изучается влияние влажного химического травления на очистку и фотокаталитические свойства порошка кремния металлургического качества. Порошок Si подвергался двухстадийному высокоэнергетическому шаровому измельчению с последующим травлением в смеси кислот HF:HCl:HNO3. Морфология и состав образцов анализировались методами TEM и EDS. Показано, что размеры частиц после обработки составляют менее 200 нм, при этом наблюдается кристаллическая структура с межплоскостным расстоянием ~0,20 нм, соответствующим плоскости Si (220). EDS-анализ подтвердил эффективное удаление металлических примесей (K, Ca, Ni) и углерода, при этом зафиксировано увеличение содержания кислорода (~8 ат.%) и азота (~12,2 ат.%) вследствие особенностей химической обработки.</p><p>Фотокаталитическая активность очищенного (Sip) и неочищенного (Sis) кремния оценивалась по разложению метиленового синего (10 мг/л) под УФ-излучением. Установлено, что Sip демонстрирует значительно более высокую эффективность: через 120 мин облучения отношение Cₜ/C₀ снижается до ~0,18, тогда как для Sis остается на уровне ~0,9. Интенсивность пика поглощения при 664 нм уменьшается более чем в четыре раза для Sip, что свидетельствует об эффективной деградации красителя.</p><p>Кинетический анализ показал, что процесс подчиняется модели псевдопервого порядка, при этом очищенные образцы характеризуются более высокой константой скорости. Улучшение фотокаталитических свойств связано с удалением примесей, снижением рекомбинации носителей заряда и увеличением числа активных центров. Полученные результаты демонстрируют, что влажное химическое травление является эффективным методом повышения функциональных характеристик металлургического кремния для экологических приложений.</p></abstract><trans-abstract xml:lang="en"><p>This study investigates the effect of wet chemical etching on impurity removal and the photocatalytic properties of metallurgical-grade silicon (Si) powder. The Si powder was subjected to a two-stage high-energy ball milling process followed by acid etching using an HF:HCl:HNO3 mixture under controlled conditions. The morphology and composition of the samples were analyzed using transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS). The results revealed particle sizes below 200 nm and a well-defined crystalline structure with an interplanar spacing of ~0.20 nm, corresponding to the Si (220) plane. EDS analysis confirmed the effective removal of metallic impurities (K, Ca, Ni) and carbon, while an increase in oxygen (~8 at.%) and nitrogen (~12.2 at.%) content was observed due to surface oxidation and chemical treatment. The photocatalytic activity of etched (Sip ) and untreated (Sis ) silicon powders was evaluated via the degradation of methylene blue (10 mg/L) under UV irradiation. After 120 minutes, the concentration ratio Ct /C0 decreased to ~0.18 for Sip , compared to ~0.9 for Sis . A more than fourfold reduction in the absorption peak at 664 nm was observed for Sip, indicating enhanced dye degradation. Kinetic analysis showed that the degradation process follows a pseudo-first-order model, with higher rate constants for the etched samples. The improved performance is attributed to impurity removal, reduced charge carrier recombination, and increased active surface sites. These results demonstrate that wet chemical etching is an effective and scalable approach to enhance the functional properties of metallurgical silicon for environmental photocatalytic applications.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>металлургический кремний</kwd><kwd>кислотное травление</kwd><kwd>фотокатализ</kwd><kwd>разложение метиленового синего</kwd><kwd>удаление примесей</kwd><kwd>наночастицы кремния</kwd><kwd>УФ-облучение</kwd><kwd>влажная химическая обработка</kwd></kwd-group><kwd-group xml:lang="en"><kwd>metallurgical silicon</kwd><kwd>acid etching</kwd><kwd>photocatalysis</kwd><kwd>methylene blue degradation</kwd><kwd>impurity removal</kwd><kwd>silicon nanoparticles</kwd><kwd>uv irradiation</kwd><kwd>wet chemical treatment</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Данное исследование было профинансировано Комитетом науки Министерства науки и высшего образования Республики Казахстан (грант № AP23486943 «Создание фотокаталитических систем на основе металлургического кремния для очистки водной среды от органических загрязнителей»).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Liu, X., Radfar, B., Chen, K., Setälä, O. 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