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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">nuc</journal-id><journal-title-group><journal-title xml:lang="ru">Вестник НЯЦ РК</journal-title><trans-title-group xml:lang="en"><trans-title>NNC RK Bulletin</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1729-7516</issn><issn pub-type="epub">1729-7885</issn><publisher><publisher-name>Национальный ядерный центр Республики Казахстан</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.52676/1729-7885-2020-4-113-118</article-id><article-id custom-type="elpub" pub-id-type="custom">nuc-300</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Статьи</subject></subj-group></article-categories><title-group><article-title>ИОННО-ПЛАЗМЕННЫЙ СИНТЕЗ, СТРУКТУРА И СВОЙСТВА СПЛАВОВ Hf-C</article-title><trans-title-group xml:lang="en"><trans-title>ION-PLASMA SYNTHESIS, STRUCTURE AND PROPERTIES OF Hf-C ALLOYS</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Тулеушев</surname><given-names>Ю. Ж.</given-names></name><name name-style="western" xml:lang="en"><surname>Tuleushev</surname><given-names>Yu. Z.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Жаканбаев</surname><given-names>Е. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Zhakanbaev</surname><given-names>E. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Орақова</surname><given-names>М. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Orakova</surname><given-names>M. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Керімше</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Kerimshe</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Мамырбаев</surname><given-names>А. К.</given-names></name><name name-style="western" xml:lang="en"><surname>Mamyrbayev</surname><given-names>A. K.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сарсенбаева</surname><given-names>К. Б.</given-names></name><name name-style="western" xml:lang="en"><surname>Sarsenbayeva</surname><given-names>K. B.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алматы</p></bio><bio xml:lang="en"><p>Almaty</p></bio><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru">Институт ядерной физики МЭ РК<country>Казахстан</country></aff><aff xml:lang="en">Institute of Nuclear Physics Ministry of Energy RK<country>Kazakhstan</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru">Казахский национальный университет им. аль-Фараби<country>Казахстан</country></aff><aff xml:lang="en">Al-Farabi Kazakh National University<country>Kazakhstan</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2020</year></pub-date><pub-date pub-type="epub"><day>30</day><month>12</month><year>2020</year></pub-date><volume>0</volume><issue>4</issue><fpage>113</fpage><lpage>118</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Тулеушев Ю.Ж., Жаканбаев Е.А., Орақова М.С., Керімше А.С., Мамырбаев А.К., Сарсенбаева К.Б., 2020</copyright-statement><copyright-year>2020</copyright-year><copyright-holder xml:lang="ru">Тулеушев Ю.Ж., Жаканбаев Е.А., Орақова М.С., Керімше А.С., Мамырбаев А.К., Сарсенбаева К.Б.</copyright-holder><copyright-holder xml:lang="en">Tuleushev Y.Z., Zhakanbaev E.A., Orakova M.S., Kerimshe A.S., Mamyrbayev A.K., Sarsenbayeva K.B.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://journals.nnc.kz/jour/article/view/300">https://journals.nnc.kz/jour/article/view/300</self-uri><abstract><p>В работе проведены исследования по синтезу покрытий на основе гафния и углерода, с использованием методики ионно-плазменного напыления покрытий из чередующихся слоев гафния и углерода с толщиной каждого слоя менее 1 нм. При выполнении работ нами была использована четырехканальная магнетронная установка с двумя оппозитно расположенными магнетронами. Один магнетрон заряжен мишенью из гафния, а второй магнетрон заряжен углеродной мишенью. Определена скорость и оптимальные режимы распыления гафния и углерода. Получены зависимости количества распыленного гафния и углерода от приложенной к магнетрону мощности. Определена средняя мощность распыления гафния, которая по выносу вещества соответствует выносу углеродапри его максимально возможной мощности распыления. Проведен синтез покрытий гафний-углерод в диапазоне концентраций от 59,8 до 5,3 ат.% углерода и выполнены рентгенографические исследования покрытий карбидов. Определено, что в покрытиях гафний-углерод, сформированных методом магнетронного осаждения, при концентрациях от 59,8 до 26,1 ат.% углерода происходит формирование кубической фазы карбида гафния, с уменьшением параметра решетки. При концентрации 16,2 ат.% углерода наряду с кубической фазой карбида гафния в покрытии начинает выделяться гафний с гексагональной структурой. При дальнейшем уменьшении концентрации углерода в покрытии гексагональная фаза гафния становится преобладающей.</p></abstract><trans-abstract xml:lang="en"><p>In this work, studies have been carried out on the synthesis of coatings based on hafnium and carbon, using the method of ion-plasma spraying of coatings from alternating layers of hafnium and carbon with a thickness of each layer less than 1 nm. When performing the work, we used a four-channel magnetron setup. In which two oppositely located magnetrons were used. One magnetron is charged with a hafnium target, and the other magnetron is charged with a carbon target. The rate and optimal modes of sputtering of hafnium and carbon have been determined. The dependences of the amount of atomized hafnium and carbon on the power applied to the magnetron are obtained. The average atomization power of hafnium has been determined, which corresponds to the removal of the substance with the removal of carbon at its maximum possible atomization power. The synthesis of hafnium-carbon coatings in the concentration range from 59.8 to 5.3 at.%. Carbon was carried out, and X-ray studies of carbide coatings were performed. Determined in the hafnium-carbon system formed by magnetron deposition, at concentrations from 59.8 to 26.1 at. % carbon in the coating, the cubic phase of hafnium carbide is formed, with a decrease in the lattice parameter. At a concentration of 16.2 at. % carbon, along with the cubic phase of hafnium carbide, hafnium with a hexagonal structure begins to precipitate in the coating. With a further decrease in the carbon concentration in the coating, the hexagonal phase of hafnium becomes predominant.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>ионно-плазменный синтез</kwd><kwd>рентгеноструктурный анализ</kwd><kwd>магнетронный распылитель</kwd><kwd>вакуумная система</kwd><kwd>наноразмерное легирование</kwd><kwd>азотирование</kwd><kwd>скорость распыления</kwd></kwd-group><kwd-group xml:lang="en"><kwd>ion-plasma synthesis</kwd><kwd>X-ray structural analysis</kwd><kwd>magnetron sputter</kwd><kwd>vacuum system</kwd><kwd>nanoscale doping</kwd><kwd>nitriding</kwd><kwd>sputtering rate</kwd></kwd-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Padture N. P., Gell M., Jordan E. H. Thermal barrier coatings for gas-turbine engine applications // Science. – 2002. – Vol. 29. – P. 280.</mixed-citation><mixed-citation xml:lang="en">Padture N. P., Gell M., Jordan E. H. 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