nucВестник НЯЦ РКNNC RK Bulletin1729-75161729-7885Национальный ядерный центр Республики Казахстан10.52676/1729-7885-2024-2-65-73nuc-641Research ArticleСтатьиСИНТЕЗ И ИССЛЕДОВАНИЕ ОПТИЧЕСКИХ, ЭЛЕКТРИЧЕСКИХ СВОЙСТВ НАНОПРОВОЛОК ДИОКСИДА ОЛОВА В ТРЕКОВОМ ТЕМПЛЭЙТЕ SiO2/SiSYNTHESIS AND STUDY OF OPTICAL, ELECTRICAL PROPERTIES OF TIN DIOXIDE NANOWIRES IN A SiO2/Si TRACK TEMPLATEhttps://orcid.org/0000-0002-6801-8667ДжунисбековаД. А.JunisbekovaD. A.

докторант, 

Астана

Astana

diana911115@gmail.comhttps://orcid.org/0000-0003-0048-0959ДаулетбековаА. К.DauletbekovaA. K.

Астана

Astana

alma_dauletbek@mail.ruhttps://orcid.org/0000-0003-1734-3109БаймухановЗ. К.BaimukhanovZ. K.

Астана

Astana

zeinb77@mail.ruhttps://orcid.org/0000-0003-1211-8877АкылбековаА. Д.AkylbekovaA. D.

Астана

Astana

aiman88_88@mail.ruhttps://orcid.org/0000-0002-6827-5567АралбаеваГ. М.AralbayevaG. M.

Астана

Astana

agm_555@mail.ruhttps://orcid.org/0000-0002-6455-6142БазарбекА. Б.BazarbekA. B.

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Astana

asyl.bazarbek.92@mail.ruhttps://orcid.org/0000-0003-2659-4831КойшыбаевЖ. К.KoishybayevaZh. K.

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Astana

zhanymgul.k@gmail.comНАО «Евразийский национальный университет им. Л.Н. Гумилева»КазахстанL.N. Gumilyov Eurasian National UniversityKazakhstan202430062024026573Copyright © Джунисбекова Д.А., Даулетбекова А.К., Баймуханов З.К., Акылбекова А.Д., Аралбаева Г.М., Базарбек А.Б., Койшыбаев Ж.К., 20242024Джунисбекова Д.А., Даулетбекова А.К., Баймуханов З.К., Акылбекова А.Д., Аралбаева Г.М., Базарбек А.Б., Койшыбаев Ж.К.Junisbekova D.A., Dauletbekova A.K., Baimukhanov Z.K., Akylbekova A.D., Aralbayeva G.M., Bazarbek A.B., Koishybayeva Z.K.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://journals.nnc.kz/jour/article/view/641

Данная работа представляет исследование структурных, оптических и электрических характеристик нанопроволок диоксида олова (SnO2) полученных методом химического осаждения (ХО) в трековый темплэйт SiO2/Si (темплэйтный синтез). Латентные треки в слое SiO2 создавались путем облучения быстрыми тяжелыми ионами (БТИ) Xe при энергии 200 МэВ с флюенсом Ф = 108 см−2 и последующим травлением в 4% водном растворе фтористоводородной кислоты (HF). Выбранный метод ХО широко распространен для осаждения нанопроволок полупроводниковых оксидов в нанопорах SiO2. Метод ХО является экономически эффективным, так как не требует специального оборудования для осаждения нанопроволок. Для осуществления осаждения применяется раствор координационного соединения металла и восстановителя. Для анализа заполнения пор после процесса ХО, морфология поверхности образцов исследовалась с помощью сканирующего микроскопа Zeiss Crossbeam 540. Кристаллографическая структура наноструктур SnO2/SiO2/Si с заполнением нанопор SnO2 исследовали методом рентгеновской дифракции. Рентгеноструктурный анализ (РСА) проводят на рентгеновском дифрактометре Rigaku SmartLab. В результате была получена наногетероструктура SnO2-НП/SiO2/Si с орторомбической кристаллической структурой нанопроволок SnO2. Спектры фотолюминесценции (ФЛ) измерялись при возбуждении светом с длиной волны 240 нм с использованием спектрофлуориметра СМ2203 (Solar). Разложение на гауссианы спектра фотолюминесценции структур SnO2-НП/SiO2/Si, показали, что они имеют низкую интенсивность, которая обусловлена в основном наличием таких дефектов как кислородные вакансии, междоузельное олово или олово с поврежденными связями. Исследование электрических характеристик проводилось с использованием патенциостата VersaStat 3 (Ametek). Измерение ВАХ показало, что полученная наногетероструктура SnO2-НП/SiO2/Si содержит массивы p-n переходов.

This work presents a study of the structural, optical and electrical characteristics of tin dioxide (SnO2) nanowires obtained by chemical deposition (CD) into a SiO2/Si track template (template synthesis). Latent tracks in the SiO2 layer were created by irradiation with swift heavy ions (SHI) of Xe at an energy of 200 MeV with a fluence of Ф = 108 cm−2 and subsequent etching in a 4% aqueous solution of hydrofluoric acid (HF). The chosen CD method is widely used for the deposition of semiconductor oxide nanowires in SiO2 nanopores. The CD method is cost-effective because it does not require special equipment for deposition of nanowires. To carry out deposition, a solution of a coordination compound of a metal and a reducing agent is used. To analyze the filling of pores after the CD process, the surface morphology of the samples was studied using a Zeiss Crossbeam 540 scanning microscope. The crystallographic structure of SnO2/SiO2/Si nanostructures with SnO2 nanopore filling was studied by X-ray diffraction. X-ray diffraction analysis (XRD) is carried out on a Rigaku SmartLab X-ray diffractometer. As a result, a SnO2-NW/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence (PL) spectra were measured upon excitation with light at a wavelength of 240 nm using a CM2203 spectrofluorimeter (Solar). Gaussian decomposition of the photoluminescence spectrum of SnO2-NW/SiO2/Si structures showed that they have low intensity, which is mainly due to the presence of defects such as oxygen vacancies, interstitial tin or tin with damaged bonds. Electrical characterization studies were performed using a VersaStat 3 potentiostat (Ametek). Measurement of the current-voltage characteristic showed that the resulting SnO2-NW/SiO2/Si nanoheterostructure contains arrays of p-n junctions.

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The authors declare that there are no conflicts of interest present.