nucВестник НЯЦ РКNNC RK Bulletin1729-75161729-7885Национальный ядерный центр Республики Казахстан10.52676/1729-7885-2025-3-25-36nuc-830Research ArticleСтатьиХИМИЧЕСКОЕ КОНТАКТНО-ОБМЕННОЕ ОСАЖДЕНИЕ МЕДИ НА ПОРИСТЫЙ КРЕМНИЙ ДЛЯ ФОРМИРОВАНИЯ НАНОКОМПОЗИТНЫХ ПЛЁНОКCHEMICAL CONTACT-EXCHANGE DEPOSITION OF COPPER ON POROUS SILICON TO FORM NANOCOMPOSITE FILMSБондаренкоА. В.BandarenkoH.

Бондаренко Анна Витальевна - доктор технических наук, доцент, заведующий НИЛ «Прикладная плазмоника».

Минск

Laboratory of Applied Plasmonics.

Minsk

h.bandarenka@bsuir.byДаулетбековаА. К.DauletbekovaA.

Даулетбекова Алма Кабдиновна - кандидат физико-математических наук, профессор.

Астана

Astana

alma_dauletbek@mail.ruБуркоА. А.BurkoA.

Бурко Александр Александрович - научный сотрудник НИЛ «Прикладная плазмоника».

Минск

Laboratory of Applied Plasmonics.

Minsk

a.burko@bsuir.byЛапутькоД. Д.LaputskoD.

Лапутько Диана Дмитриевна - инженер-электроник НИЛ «Прикладная плазмоника».

Минск

Laboratory of Applied Plasmonics.

Minsk

d.laputko@bsuir.byШапельА. А.ShapelA.

Шапель Анастасия Александровна - стажер младшего научного сотрудника НИЛ «Прикладная плазмоника».

Минск

Laboratory of Applied Plasmonics.

Minsk

shapel.nastya@gmail.comКошкароваВ. М.KoshkarovaV.

Кошкарова Вероника Михайловна - инженер-электроник НИЛ «Прикладная плазмоника».

Минск

Laboratory of Applied Plasmonics.

Minsk

v.koshkarova@bsuir.byАкилбековА. Т.AkilbekovA.

Акилбеков Абдираш Тасанович - доктор физико-математических наук, профессор.

Астана

Astana

akilbekov_at@enu.kzДжунисбековаД. А.JunisbekovaD.

Джунисбекова Диана Алтаевна - доктор философии (PhD), преподаватель.

Астана

Astana

diana911115@gmail.comАбдрахметоваА. А.AbdrakhmetovaA.

Абдрахметова Айнаш Ашимовна - доктор философии (PhD), старший преподаватель.

Астана

Astana

abdrakhmetova_aa@enu.kzБаймухановЗ. К.BaimukhanovZ.

Баймуханов Зейн Каирбекович - кандидат физико-математических наук, ассоциированный профессор.

Астана

Astana

zeinb77@mail.ruБелорусский государственный университет информатики и радиоэлектроникиБеларусьBelarusian State University of Informatics and RadioelectronicsBelarusНАО «Евразийский национальный университет им. Л.Н. Гумилева»КазахстанL.N. Gumilyov Eurasian National UniversityKazakhstan202522102025032536Copyright © Бондаренко А.В., Даулетбекова А.К., Бурко А.А., Лапутько Д.Д., Шапель А.А., Кошкарова В.М., Акилбеков А.Т., Джунисбекова Д.А., Абдрахметова А.А., Баймуханов З.К., 20252025Бондаренко А.В., Даулетбекова А.К., Бурко А.А., Лапутько Д.Д., Шапель А.А., Кошкарова В.М., Акилбеков А.Т., Джунисбекова Д.А., Абдрахметова А.А., Баймуханов З.К.Bandarenko H., Dauletbekova A., Burko A., Laputsko D., Shapel A., Koshkarova V., Akilbekov A., Junisbekova D., Abdrakhmetova A., Baimukhanov Z.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://journals.nnc.kz/jour/article/view/830

Исследованы закономерности химического контактно-обменного осаждения тонких плёнок меди на пористый кремний. Для осаждения меди использованы водные и водно-спиртовые растворы сернокислой меди с добавками фтористоводородной кислоты. Определено оптимальное соотношение концентраций компонентов раствора, позволяющее контролировать кинетику процесса осаждения и получать блестящие плёнки меди с хорошей адгезией к кремниевой подложке.

Установлено, что на пористый кремний медь осаждается в виде плёнки, состоящей из зёрен микро- и нанометрового размера. Плотность упаковки и размер зёрен меди определяются как временем осаждения, так и диаметром пор пористого кремния. Показано, что при пористости до 10% зарождение медных зёрен происходит только на вершинах кремниевых нанокристаллитов матрицы пористого кремния. Увеличение пористости приводит к одновременному зарождению зёрен меди на внутренней поверхности каналов пор и вершинах кремниевых нанокристаллитов. Зарегистрированы спектры отражения нанокомпозитных пленок. Установлено, что максимальная интенсивность полосы поглощения, обусловленная поверхностным плазмонным резонансом, характерна для плёнки, осаждённой в течение 5 минут из спиртосодержащего раствора на пористый кремний, который сформирован на пластине КЭС-0,01 (111). Таким образом, варьируя размерами пор пористого слоя и условиями осаждения, можно изготавливать различные типы тонкопленочных нанокомпозитных структур из кремния и меди, перспективные для применения в качестве функциональных наноматериалов электроники и фотоники.

The regularities of chemical contact-exchange deposition of thin copper films on porous silicon are investigated. Aqueous and aqueous-alcoholic solutions of copper sulfate with hydrofluoric acid additives are used for copper deposition. The optimal ratio of solution component concentrations is determined, which allows controlling the kinetics of the deposition process and obtaining shiny copper films with good adhesion to the silicon substrate. It is established that copper is deposited on porous silicon in the form of a film consisting of micro- and nanometer-sized grains. The packing density and the size of copper grains are determined by both the deposition time and the pore diameter of porous silicon. It is shown that at a porosity of up to 10%, copper grains nucleate only on the vertices of silicon nanocrystallites of the porous silicon matrix. An increase in porosity leads to the simultaneous nucleation of copper grains on the inner surface of the pore channels and the vertices of silicon nanocrystallites. Reflection spectra of nanocomposite films were recorded. It was found that the maximum intensity of the absorption band, caused by surface plasmon resonance, is characteristic of a film deposited for 5 min. from an alcohol-containing solution on porous silicon, which was formed on the silicon wafer of n-type with resistivity 0.01 and orientation (111). Thus, by varying the pore sizes of the porous layer and the deposition conditions, it is possible to manufacture various types of thin-film nanocomposite structures from silicon and copper, promising for use as functional nanomaterials in electronics and photonics.

пористый кремнийхимическое контактно-обменное осаждениенаночастицы медиповерхностный плазмонный резонанснанокомпозитные плёнкиporous siliconchemical contact-exchange depositioncopper nanoparticlessurface plasmon resonancenanocomposite filmsИсследования выполнены в рамках грантового проекта AP23487881 «Синтез и исследование адгезионно прочных многослойных наноструктур из широкозонных полупроводников на модифицированном пористом кремнии для солнечных элементов и фотодетекторов» Министерства науки и высшего образования Республики Казахстан.ReferencesFöll H., Christophersen M., Carstensen J., and Hasse G. Formation and application of porous silicon // Materials Science and Engineering: R: Reports. – 2002. – V. 39. – No. 4. – P. 93–141. https://doi.org/10.1016/S0927-796X(02)00090-6Föll H., Christophersen M., Carstensen J., and Hasse G. 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The authors declare that there are no conflicts of interest present.