nucВестник НЯЦ РКNNC RK Bulletin1729-75161729-7885Национальный ядерный центр Республики Казахстан10.52676/1729-7885-2025-4-88-99nuc-911Research ArticleСтатьиРАДИАЦИОННАЯ СТОЙКОСТЬ СПЛАВОВ НА ОСНОВЕ ВАНАДИЯ К СЕГРЕГАЦИИ ПРИ ОБЛУЧЕНИИ ТЯЖЁЛЫМИ ИОНАМИ КРИПТОНАRESISTANCE OF VANADIUM-BASED ALLOYS TO RADIATION-INDUCED SEGREGATION UNDER IRRADIATION WITH HEAVY KRYPTON IONSИвановИ. А.IvanovI. A.

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Almaty

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i.ivanov@inp.kzhttps://orcid.org/0000-0002-3598-1633АманжуловБ. С.AmanzhulovB. S.

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Almaty

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b.amanzhulov@inp.kzУгловВ. В.UglovV. V.

Минск

Minsk

uglov@bsu.byЗлоцкийС. В.ZlotskiS. V.

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Minsk

zlotski@bsu.byТемірӘ. М.TemirA. M.

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a.temir@inp.kzСапарӘ. Д.SaparA. D.

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a.sapar@inp.kzУнгарбаевЕ. О.UngarbaevYe. O.

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e.ungarbayev@inp.kzДжинКеJinKe

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jinke@bit.edu.cnРысқұловА. Е.RyskulovA. E.

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ryskulov_nbd@mail.ruРГП «Институт ядерной физики» Агентства РК по атомной энергии; Евразийский национальный университет им. Л.Н. ГумилеваКазахстанRSE «Institute of nuclear physics» of the Agency of the RK for Atomic Energy; L.N. Gumilyov Eurasian National UniversityKazakhstanБелорусский государственный университетБеларусьBelarusian State UniversityBelarusПекинский Технологический ИнститутКитайBeijing Institute of TechnologyChinaРГП «Институт ядерной физики» Агентства РК по атомной энергииКазахстанRSE «Institute of nuclear physics» of the Agency of the RK for Atomic EnergyKazakhstan202508122025048899Copyright © Иванов И.А., Аманжулов Б.С., Углов В.В., Злоцкий С.В., Темір Ә.М., Сапар Ә.Д., Унгарбаев Е.О., Джин К., Рысқұлов А.Е., 20252025Иванов И.А., Аманжулов Б.С., Углов В.В., Злоцкий С.В., Темір Ә.М., Сапар Ә.Д., Унгарбаев Е.О., Джин К., Рысқұлов А.Е.Ivanov I.A., Amanzhulov B.S., Uglov V.V., Zlotski S.V., Temir A.M., Sapar A.D., Ungarbaev Y.O., Jin K., Ryskulov A.E.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://journals.nnc.kz/jour/article/view/911

В работе исследовались изменения морфологии и элементного состава сплавов на основе системы V-Nb-Ta-Ti после облучения ионами 84Kr15+ с энергией 147 МэВ и флюенсом ионов 1·1013–1·1015 см−2. Обнаружено, что облучение ионами криптона не привело к значительным повреждениям поверхности образцов V, VNb, VNbTa, VNbTaTi кроме образования тёмных пятен и сколов, размер и количество которых уменьшались от V к VNbTaTi. Анализ методом энергодисперсионной спектроскопии на растровом электронном микроскопе (РЭМ-ЭДС) показал, что состав всех исходных образцов был близким к эквиатомному. С усложнением состава от VNb к среднеэнтропийному сплаву (СЭС) VNbTa, радиационная сегрегация элементов в образцах увеличилась, но при этом уменьшилась в высокоэнтропийном сплаве (ВЭС) VNbTaTi. Наибольшее изменение концентраций было обнаружено в сплаве VNbTa, где концентрация Ta увеличилась на 18,5% (4,4 ат.% (атомных процентов)) по сравнению с необлученным образцом. Обнаружено, что в сплавах VNbTa и VNbTaTi сегрегация усиливалась с увеличением флюенса, а в VNb сегрегации достигла пика при 1·1014 см−2, а затем уменьшилась. С помощью анализа методом Резерфордовского обратного рассеяния (РОР) показано, что в образцах VNbTa и VNbTaTi, облученных ионами криптона с флюенсом 1·1013 см−2 концентрация атомов Ta увеличивалась с глубиной на 33–34% (8,6–12 ат.%) относительно исходной концентрации. Результаты анализа методами ЭДС и РОР показали схожие тенденции. Изменения концентраций элементов в приповерхностном слое VNb, VNbTa и VNbTaTi для тяжёлых элементов Nb, Ta превосходили таковые у лёгких. Различие в сегрегации элементов вероятно связано с разницей в искажении решётки, локальным химическим составом, разной зависимостью миграции атомов V, Nb, Ta, Ti от вакансий и междоузлий. Облучение ионами криптона привело к радиационной сегрегации в СЭС VNbTa и ВЭС VNbTaTi, но распределение элементов по поверхности образцов не образовало выраженных областей сегрегации. ВЭС VNbTaTi проявил большую устойчивость к радиационной сегрегации. 

This work investigated changes in the morphology and elemental composition of alloys based on the V-Nb-Ta-Ti system after irradiation with 84Kr15+ ions with an energy of 147 MeV and an ion fluence of 1·1013–1·1015 cm−2. It was found that irradiation with krypton ions did not lead to significant damage to the surface of V, VNb, VNbTa, VNbTaTi samples, except for the formation of dark spots and chips, the size and number of which decreased from V to VNbTaTi. Scanning electron microscopy energy dispersive spectroscopy (SEM-EDS) analysis showed that the composition of all the initial samples was close to equiatomic. With increasing composition complexity from VNb to the medium entropy alloy (MEA) VNbTa, the radiation-induced segregation of elements in the samples increased, but decreased in the high-entropy alloy (HEA) VNbTaTi. The largest change in concentrations was found in VNbTa, where the Ta concentration increased by 18.5% (4.4 at.% (atomic percents)) compared to the unirradiated sample. It was found that in VNbTa and VNbTaTi, the segregation increased with increasing fluence, and in VNb, the segregation peaked at 1·1014 cm−2 and then decreased. Using the Rutherford backscattering (RBS) analysis, it was shown that in samples irradiated with krypton ions with a fluence of 1·1013 cm−2, the concentration of Ta atoms increased with depth by 33–34% (8.6–12 at.%) relative to the initial concentration. The results of the EDS and RBS analysis showed similar trends. Changes in the concentrations of elements in the near-surface layer of VNb, VNbTa and VNbTaTi for heavy elements Nb, Ta exceeded those for the light ones. The difference in the segregation of elements is probably due to the difference in lattice distortion, local chemical composition, different dependence of the migration of V, Nb, Ta, Ti atoms on vacancies and interstitials. Irradiation with krypton ions resulted in segregation in VNbTa MEA and VNbTaTi HEA, but the distribution of elements over the surface of the samples did not form distinct segregation regions. VNbTaTi HEA showed greater resistance to radiation-induced segregation.

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The authors declare that there are no conflicts of interest present.