nucВестник НЯЦ РКNNC RK Bulletin1729-75161729-7885Национальный ядерный центр Республики Казахстан10.52676/1729-7885-2026-2-37-46nuc-992Research ArticleСтатьиОБЗОР: ОПТИЧЕСКИЕ СВОЙСТВА КОМПОЗИТНЫХ МАТЕРИАЛОВ НА ОСНОВЕ КАРБИДА КРЕМНИЯREVIEW: OPTICAL PROPERTIES OF SILICON CARBIDE-BASED COMPOSITE MATERIALShttps://orcid.org/0009-0000-8433-6414ХамидоваС. Н.HamidovaS. N.

Баку

Sevinj Natiq Hamidova

Academic Zahid Khalilov 33, AZ1148, Baku

hamidova.sevinc.natiq@bsu.edu.azМаммадовВ. У.MammadovV. U.

Баку

Vusal Usub Mammadov

Academic Zahid Khalilov 33, AZ1148, Baku

vusalmammadov@bsu.edu.azБакинский государственный университетАзербайджанBaku State University, Physics Faculty, , AzerbaijanAzerbaijanБакинский государственный университетАзербайджанBaku State UniversityAzerbaijan202609082026023746Copyright © Хамидова С.Н., Маммадов В.У., 20262026Хамидова С.Н., Маммадов В.У.Hamidova S.N., Mammadov V.U.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://journals.nnc.kz/jour/article/view/992

В обзоре представлен комплексный анализ оптических свойств карбида кремния (SiC) – от объемных кристаллов до 0D-наноструктур. Систематизирована зависимость оптического отклика от политипизма: ширина непрямой запрещенной зоны возрастает с увеличением гексагональности от 2,36 эВ (3C-SiC) до 3,23 эВ (4H-SiC). Для тонких пленок установлено, что отжиг при 800°C и толщина до 250 нм оптимизируют кристалличность, снижая коэффициент поглощения почти на 20%. Эффекты квантового ограничения в 0D-квантовых точках вызывают голубое смещение переходов с расширением зоны до 4,5 эВ. Значительные энергии связи экситонов (0,5–1,0 эВ) в 2D-монослоях SiC обуславливают необходимость применения многочастичных поправок GW+BSE взамен стандартных методов DFT. Наножидкости на основе SiC демонстрируют рост эффективности солнечного поглощения на 150% и 98%-ную стабильность, подтверждая перспективность материала для прямопоглощающих солнечных коллекторов. В заключении обозначены расхождения между теорией и экспериментом, а также обоснована важность интегрированного моделирования в будущих исследованиях фотоники на основе SiC.

This review provides a comprehensive analysis of the optical properties of silicon carbide (SiC) across various structural forms, from bulk crystals to 0D nanostructures and depending on different parameters and factors. The study systematically evaluates the dependence of SiC's intrinsic optical response on its polytypism, where the indirect band gap is shown to scale with hexagonality from 2.36 eV (3C-SiC) to 3.23 eV (4H-SiC). For thin films and heterostructures, it is observed that processing parameters, such as annealing at 800°C and increasing layer thickness to 250 nm, optimize crystallinity and reduce the absorption coefficient by nearly 20%. At the nanoscale, quantum confinement effects induce a significant blue shift in optical transitions, with band gaps reaching 4.5 eV in 0D quantum dots. The review further details the impact of excitonic binding energies, which reach values of 0.5–1.0 eV in 2D SiC monolayers, highlighting the necessity of GW+BSE many-body corrections for accurate optical modeling over standard DFT methods. Finally, the investigation of SiC nanofluids reveals a 150% enhancement in solar absorption efficiency and 98% long-term durability, confirming SiC as a robust candidate for direct absorption solar collectors. The work concludes by identifying current gaps between theoretical predictions and experimental validation, emphasizing the need for integrated modeling in future SiC-based photonic research.

SiCоптические свойстваширина запрещённой зоныполитипизмквантовое ограничениеэкситонные эффектытонкие пленкинаножидкостисолнечное поглощениеSiCoptical propertiesband gap valuepolytypismquantum confinementexcitonic effectsthin filmsnanofluidssolar absorption.ReferencesLarruquert J. I., et al. Self-consistent optical constants of SiC thin films and their comparison with previous results // J. Opt. Soc. Am. A. – 2011. – Vol. 28, No. 11. – P. 2340–2345.Larruquert J. I., et al. Self-consistent optical constants of SiC thin films and their comparison with previous results // J. Opt. Soc. Am. A. – 2011. – Vol. 28, No. 11. – P. 2340–2345.Zhang J., et al. Optical constants of SiC from 0.05 to 5.0 eV // Opt. Mater. – 2010. – Vol. 32, No. 11. – P. 1530– 1535.Zhang J., et al. Optical constants of SiC from 0.05 to 5.0 eV // Opt. Mater. – 2010. – Vol. 32, No. 11. – P. 1530– 1535.Shi X., et al. Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices // Materials. – 2023. – Vol. 16, No. 6. – 2324.Shi X., et al. Wet-Oxidation-Assisted Chemical Mechanical Polishing and High-Temperature Thermal Annealing for Low-Loss 4H-SiC Integrated Photonic Devices // Materials. – 2023. – Vol. 16, No. 6. – 2324.Widmann M., et al. Room-temperature coherent control of single spins in silicon carbide // Nat. Mater. – 2015. – Vol. 14, No. 2. – P. 164–168.Widmann M., et al. Room-temperature coherent control of single spins in silicon carbide // Nat. Mater. – 2015. – Vol. 14, No. 2. – P. 164–168.Castelletto S., et al. Silicon Carbide Photonics Bridging Quantum Technology // ACS Photonics. – 2022. – Vol. 9, No. 5. – P. 1434–1457.Castelletto S., et al. Silicon Carbide Photonics Bridging Quantum Technology // ACS Photonics. – 2022. – Vol. 9, No. 5. – P. 1434–1457.Cong Q., et al. Silicon Carbide-based Materials from Rice Husk: Synthesis and Applications // Curr. Nanosci. – 2025. – Vol. 21, No. 4. – P. 585–595.Cong Q., et al. Silicon Carbide-based Materials from Rice Husk: Synthesis and Applications // Curr. Nanosci. – 2025. – Vol. 21, No. 4. – P. 585–595.Liu Y., et al. Advancements in silicon carbide-based supercapacitors: materials, performance, and emerging applications // Nanoscale. – 2024. – Vol. 16, No. 2. – P. 504–526.Liu Y., et al. Advancements in silicon carbide-based supercapacitors: materials, performance, and emerging applications // Nanoscale. – 2024. – Vol. 16, No. 2. – P. 504–526.Kukushkin S. A., Osipov V. V. Polytypism in SiC: a review of the growth of SiC and its properties // J. Phys. D: Appl. Phys. – 2020. – Vol. 53, No. 4. – 045105.Kukushkin S. A., Osipov V. V. Polytypism in SiC: a review of the growth of SiC and its properties // J. Phys. D: Appl. Phys. – 2020. – Vol. 53, No. 4. – 045105.Montañez E., et al. Optical properties of SiC polytypes from first-principles calculations // Phys. Rev. B. – 2013. – Vol. 88, No. 4. – 045204.Montañez E., et al. Optical properties of SiC polytypes from first-principles calculations // Phys. Rev. B. – 2013. – Vol. 88, No. 4. – 045204.Zhang X., Kioupakis E. Phonon-assisted optical absorption of SiC polytypes from first principles // Phys. Rev. B. – 2023. – Vol. 107, No. 11. – 115207.Zhang X., Kioupakis E. Phonon-assisted optical absorption of SiC polytypes from first principles // Phys. Rev. B. – 2023. – Vol. 107, No. 11. – 115207.Ouadfel O., et al. Optical constants of amorphous silicon carbide layers deposited by PECVD // Optik. – 2013. – Vol. 124, No. 20. – P. 4530–4535.Ouadfel O., et al. Optical constants of amorphous silicon carbide layers deposited by PECVD // Optik. – 2013. – Vol. 124, No. 20. – P. 4530–4535.Tehrani A., et al. Optical response of SiC thin films: The effect of nitrogen doping concentration // Thin Solid Films. – 2019. – Vol. 685. – P. 321–330.Tehrani A., et al. Optical response of SiC thin films: The effect of nitrogen doping concentration // Thin Solid Films. – 2019. – Vol. 685. – P. 321–330.Tavşanoğlu Ö., et al. Optical properties of SiC thin films produced by filtered cathodic vacuum arc // Appl. Surf. Sci. – 2011. – Vol. 257, No. 21. – P. 8830–8835.Tavşanoğlu Ö., et al. Optical properties of SiC thin films produced by filtered cathodic vacuum arc // Appl. Surf. Sci. – 2011. – Vol. 257, No. 21. – P. 8830–8835.Jannat S., et al. Optical behavior of SiC films under various deposition conditions: A first-principles study // Opt. Quant. Electron. – 2017. – Vol. 49, No. 7. – 245.Jannat S., et al. Optical behavior of SiC films under various deposition conditions: A first-principles study // Opt. Quant. Electron. – 2017. – Vol. 49, No. 7. – 245.Charpentier J., et al. Oxidation impact on Si–SiC optics: Experimental and numerical investigation // Ceramics International. – 2020. – Vol. 46, No. 10. – P. 15400–15408.Charpentier J., et al. Oxidation impact on Si–SiC optics: Experimental and numerical investigation // Ceramics International. – 2020. – Vol. 46, No. 10. – P. 15400–15408.Lobanok A., et al. Optical absorption in SiC/Si heterostructures prepared by ion-beam synthesis // J. Appl. Spectroscopy. – 2022. – Vol. 89, No. 3. – P. 450–456.Lobanok A., et al. Optical absorption in SiC/Si heterostructures prepared by ion-beam synthesis // J. Appl. Spectroscopy. – 2022. – Vol. 89, No. 3. – P. 450–456.El-Fattah Z. A., et al. CuO/ZnO/SiC and Al2O3/ZnO/SiC multilayers for enhanced solar-blind photodetection // Sci. Rep. – 2023. – Vol. 13, No. 1. – 4530.El-Fattah Z. A., et al. CuO/ZnO/SiC and Al2O3/ZnO/SiC multilayers for enhanced solar-blind photodetection // Sci. Rep. – 2023. – Vol. 13, No. 1. – 4530.Karimi M., et al. Optical response of SiC/Graphene multilayers in the ultraviolet range // Optik. – 2024. – Vol. 295. – 171550.Karimi M., et al. Optical response of SiC/Graphene multilayers in the ultraviolet range // Optik. – 2024. – Vol. 295. – 171550.Houmad A., et al. Optical properties of SiC nanosheets: A density functional theory study // Optik. – 2016. – Vol. 127, No. 16. – P. 6530–6535.Houmad A., et al. Optical properties of SiC nanosheets: A density functional theory study // Optik. – 2016. – Vol. 127, No. 16. – P. 6530–6535.Jindal V., et al. Optical properties of SiC quantum dots: Size effects and surface passivation // J. Phys. D: Appl. Phys. – 2023. – Vol. 56, No. 15. – 155105.Jindal V., et al. Optical properties of SiC quantum dots: Size effects and surface passivation // J. Phys. D: Appl. Phys. – 2023. – Vol. 56, No. 15. – 155105.Sun L., et al. Optical conductivity of SiC nanoribbons: Edge effects and width dependence // Eur. Phys. J. B. – 2022. – Vol. 95, No. 7. – 110.Sun L., et al. Optical conductivity of SiC nanoribbons: Edge effects and width dependence // Eur. Phys. J. B. – 2022. – Vol. 95, No. 7. – 110.Karimi M., et al. Optical response of SiC nanostructures in the UV-Vis range for optoelectronic applications // Optik. – 2025. – Vol. 310. – 172550.Karimi M., et al. Optical response of SiC nanostructures in the UV-Vis range for optoelectronic applications // Optik. – 2025. – Vol. 310. – 172550.Andriotis A. N., et al. Electronic structure of SiC nanostructures: Influence of size and geometry // Phys. Rev. B. – 2012. – Vol. 86, No. 4. – 045420.Andriotis A. N., et al. Electronic structure of SiC nanostructures: Influence of size and geometry // Phys. Rev. B. – 2012. – Vol. 86, No. 4. – 045420.Spindlberger K. R., et al. Optical and spin properties of vanadium defects in silicon carbide // arXiv. – 2019. – 1910.05550.Spindlberger K. R., et al. Optical and spin properties of vanadium defects in silicon carbide // arXiv. – 2019. – 1910.05550.Chen W., et al. Experimental investigation of SiC nanofluids for solar distillation system: stability, optical properties and thermal conductivity with saline water-based fluid // Int. J. Heat Mass Transfer. – 2017. – Vol. 107. – P. 264–270.Chen W., et al. Experimental investigation of SiC nanofluids for solar distillation system: stability, optical properties and thermal conductivity with saline water-based fluid // Int. J. Heat Mass Transfer. – 2017. – Vol. 107. – P. 264–270.Osip H., et al. Influence of SiC Polytype on the Thermal Conductivity of SiC Nanofluids: A Critical Review // Molecules. – 2026. – Vol. 31, No. 5. – 878.Osip H., et al. Influence of SiC Polytype on the Thermal Conductivity of SiC Nanofluids: A Critical Review // Molecules. – 2026. – Vol. 31, No. 5. – 878.Zhang Z., et al. Advances in Enhancing the Photothermal Performance of Nanofluid-Based Direct Absorption Solar Collectors // Nanomaterials. – 2025. – Vol. 15, No. 18. – 1428.Zhang Z., et al. Advances in Enhancing the Photothermal Performance of Nanofluid-Based Direct Absorption Solar Collectors // Nanomaterials. – 2025. – Vol. 15, No. 18. – 1428.Kunle O. O., et al. Optical characterization of SiC thin films using spectroscopic ellipsometry // Mater. Sci. Eng. B. – 2010. – Vol. 167, No. 2. – P. 120–125.Kunle O. O., et al. Optical characterization of SiC thin films using spectroscopic ellipsometry // Mater. Sci. Eng. B. – 2010. – Vol. 167, No. 2. – P. 120–125.Kar R., et al. Optical constants and electronic properties of cubic silicon carbide thin films // Optik. – 2024. – Vol. 290. – 171550.Kar R., et al. Optical constants and electronic properties of cubic silicon carbide thin films // Optik. – 2024. – Vol. 290. – 171550.Kaloyeros A. E., Arkles B. Silicon carbide thin film technologies: Recent advances in processing, properties, and applications: Part II // ECS J. Solid State Sci. Technol. – 2024. – Vol. 13, No. 4. – 043001.Kaloyeros A. E., Arkles B. Silicon carbide thin film technologies: Recent advances in processing, properties, and applications: Part II // ECS J. Solid State Sci. Technol. – 2024. – Vol. 13, No. 4. – 043001.Boukhvalov D. W., et al. Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon // Appl. Surf. Sci. – 2024. – Vol. 642. – 158550.Boukhvalov D. W., et al. Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon // Appl. Surf. Sci. – 2024. – Vol. 642. – 158550.Wang Q., et al. A review of femtosecond laser processing of silicon carbide: Techniques and mechanisms // Micromachines. – 2024. – Vol. 15, No. 5. – 639.Wang Q., et al. A review of femtosecond laser processing of silicon carbide: Techniques and mechanisms // Micromachines. – 2024. – Vol. 15, No. 5. – 639.Obaid R. S., Hashim M. R. PC/SiC/TaC hybrid structures: Fabrication and optical properties for sensing applications // Silicon. – 2022. – Vol. 14, No. 9. – P. 4530–4538.Obaid R. S., Hashim M. R. PC/SiC/TaC hybrid structures: Fabrication and optical properties for sensing applications // Silicon. – 2022. – Vol. 14, No. 9. – P. 4530–4538.Zhang J., et al. Optical properties of SiC heterojunctions for advanced optoelectronic devices // Appl. Phys. A. – 2019. – Vol. 125, No. 7. – 450.Zhang J., et al. Optical properties of SiC heterojunctions for advanced optoelectronic devices // Appl. Phys. A. – 2019. – Vol. 125, No. 7. – 450.Gahramanli L., et al. Structural, morphological, and optical properties of SiC/PVP nanocomposite materials by changing the SiC concentration in PVP // RSC Adv. – 2025. – Vol. 15, No. 58. – P. 49990–50000.Gahramanli L., et al. Structural, morphological, and optical properties of SiC/PVP nanocomposite materials by changing the SiC concentration in PVP // RSC Adv. – 2025. – Vol. 15, No. 58. – P. 49990–50000.Li N., et al. Silicon carbide-infiltrated photonic crystal fiber: high birefringence and nonlinear optics enhancements // Phys. Scr. – 2025. – Vol. 100, No. 8. – 085548.Li N., et al. Silicon carbide-infiltrated photonic crystal fiber: high birefringence and nonlinear optics enhancements // Phys. Scr. – 2025. – Vol. 100, No. 8. – 085548.Jia C., et al. Passivated SiC nanowires: Electronic structure and optical properties // Phys. Lett. A. – 2020. – Vol. 384, No. 25. – 126550Jia C., et al. Passivated SiC nanowires: Electronic structure and optical properties // Phys. Lett. A. – 2020. – Vol. 384, No. 25. – 126550Chen Y., et al. Photoluminescence of SiC nanowires synthesized by carbothermal reduction // Appl. Phys. A. – 2011. – Vol. 104, No. 2. – P. 530–535.Chen Y., et al. Photoluminescence of SiC nanowires synthesized by carbothermal reduction // Appl. Phys. A. – 2011. – Vol. 104, No. 2. – P. 530–535.Karimi M., et al. Optical spectra of 2D SiC: Many-body effects and excitonic features // Sol. Energy. – 2025. – Vol. 280. – 112550.Karimi M., et al. Optical spectra of 2D SiC: Many-body effects and excitonic features // Sol. Energy. – 2025. – Vol. 280. – 112550.von Bardeleben H. J., et al. NV centers in 4H-SiC: A theoretical and experimental study of their optical properties // Phys. Rev. B. – 2015. – Vol. 92, No. 6. – 064204.von Bardeleben H. J., et al. NV centers in 4H-SiC: A theoretical and experimental study of their optical properties // Phys. Rev. B. – 2015. – Vol. 92, No. 6. – 064204.Magnusson E., et al. Optical signatures of defects in SiC: A photoluminescence study of point defects // Phys. Rev. B. – 2018. – Vol. 98, No. 4. – 045205.Magnusson E., et al. Optical signatures of defects in SiC: A photoluminescence study of point defects // Phys. Rev. B. – 2018. – Vol. 98, No. 4. – 045205.Wolfowicz G., et al. Spin coherence in SiC: Decoherence mechanisms and material optimization // Nat. Nanotechnol. – 2017. – Vol. 12, No. 5. – P. 450–455.Wolfowicz G., et al. Spin coherence in SiC: Decoherence mechanisms and material optimization // Nat. Nanotechnol. – 2017. – Vol. 12, No. 5. – P. 450–455.Nagy R., et al. High-fidelity readout in SiC: Single-spin detection and quantum sensing // Nat. Commun. – 2018. – Vol. 9, No. 1. – 3705.Nagy R., et al. High-fidelity readout in SiC: Single-spin detection and quantum sensing // Nat. Commun. – 2018. – Vol. 9, No. 1. – 3705.Liu C., et al. Controllable fabrication and applications of one‐dimensional silicon carbide nanomaterials: A review // J. Am. Ceram. Soc. – 2025. – Vol. 108, No. 8. – e20526.Liu C., et al. Controllable fabrication and applications of one‐dimensional silicon carbide nanomaterials: A review // J. Am. Ceram. Soc. – 2025. – Vol. 108, No. 8. – e20526.Lin Y., et al. Electronic structure of SiC nanostructures: Beyond the local density approximation // J. Mater. Chem. C. – 2013. – Vol. 1, No. 30. – P. 4600–4610.Lin Y., et al. Electronic structure of SiC nanostructures: Beyond the local density approximation // J. Mater. Chem. C. – 2013. – Vol. 1, No. 30. – P. 4600–4610.Lin Y., et al. Optical behavior of 2D SiC: Band gap engineering and electronic properties // J. Mater. Chem. C. – 2013. – Vol. 1, No. 29. – P. 4530–4538.Lin Y., et al. Optical behavior of 2D SiC: Band gap engineering and electronic properties // J. Mater. Chem. C. – 2013. – Vol. 1, No. 29. – P. 4530–4538.Abdullah M. Z., et al. Buckled SiC monolayer optics: Strain-induced changes in optical response // Mater. Chem. Phys. – 2023. – Vol. 295. – 127550.Abdullah M. Z., et al. Buckled SiC monolayer optics: Strain-induced changes in optical response // Mater. Chem. Phys. – 2023. – Vol. 295. – 127550.Hsueh H., et al. Excitonic effects in SiC sheets: A firstprinciples many-body study // Phys. Rev. B. – 2011. – Vol. 84, No. 4. – 045410.Hsueh H., et al. Excitonic effects in SiC sheets: A firstprinciples many-body study // Phys. Rev. B. – 2011. – Vol. 84, No. 4. – 045410.Chen W., et al. An investigation into the thermophysical and optical properties of SiC/ionic liquid nanofluid for direct absorption solar collector // Sol. Energy Mater. Sol. Cells. – 2017. – Vol. 163. – P. 157–163.Chen W., et al. An investigation into the thermophysical and optical properties of SiC/ionic liquid nanofluid for direct absorption solar collector // Sol. Energy Mater. Sol. Cells. – 2017. – Vol. 163. – P. 157–163.Wu Y., et al. Optical behavior of SiC monolayers: Effect of biaxial strain // Superlattices Microstruct. – 2014. – Vol. 70. – P. 45–52.Wu Y., et al. Optical behavior of SiC monolayers: Effect of biaxial strain // Superlattices Microstruct. – 2014. – Vol. 70. – P. 45–52.Li X., et al. The stability, optical properties and solarthermal conversion performance of SiC-MWCNTs hybrid nanofluids for the direct absorption solar collector (DASC) application // Sol. Energy Mater. Sol. Cells. – 2020. – Vol. 206. – 110323.Li X., et al. The stability, optical properties and solarthermal conversion performance of SiC-MWCNTs hybrid nanofluids for the direct absorption solar collector (DASC) application // Sol. Energy Mater. Sol. Cells. – 2020. – Vol. 206. – 110323.Hsueh H., et al. Excitons in SiC sheets and nanotubes: A comparative first-principles study // Phys. Rev. B. – 2011. – Vol. 84, No. 12. – 125410.Hsueh H., et al. Excitons in SiC sheets and nanotubes: A comparative first-principles study // Phys. Rev. B. – 2011. – Vol. 84, No. 12. – 125410.Singh S., et al. Influence of Reduced Graphene Oxide Flakes Addition on the Electromagnetic Wave Absorption Performance of Silicon Carbide-Based Wave Absorber // JOM. – 2024. – Vol. 76, No. 1. – P. 486–495.Singh S., et al. Influence of Reduced Graphene Oxide Flakes Addition on the Electromagnetic Wave Absorption Performance of Silicon Carbide-Based Wave Absorber // JOM. – 2024. – Vol. 76, No. 1. – P. 486–495.

The authors declare that there are no conflicts of interest present.