СИНТЕЗ НАНОПРОВОЛОК ОРТОРОМБИЧЕСКОГО ДИОКСИДА ОЛОВА В ТРЕКОВЫХ ТЕМПЛЭЙТАХ

В данной работе проведен синтез орторомбических нанопроволок (НП) SnO₂ методом электрохимического осаждения в подготовленный ионно-трековый темплэйт SiO₂/Si-p. Трекообразования в структуре SiO₂/Si создавались путем облучения на циклотроне ДЦ-60 быстрыми тяжелыми ионами Xe с энергией 200 МэВ (Ф = 10⁸ см⁻²). Для формирования нанопористых шаблонов использовали 4% водный раствор фтористоводородной кислоты (HF). Электрохимическое осаждение (ЭХО) SnO₂ в трековый темплэйт осуществляли при комнатной температуре, напряжение на электродах составляла 1,75 В. При процессе ЭХО, был использован электролит со следующим химическим составом: 6 г/л SnCl₂ (Sigma-Aldrich) – 25 мл H₂O – 2 мл HCl («хч»; 35%; ρ = 1,1740 г/см³). Морфология поверхности образцов, после процесса ЭХО, исследовались на двухлучевом сканирующем микроскопе Zeiss Crossbeam 540. Фазовый состав, кристаллографическая структура наногетероструктур (SnO₂/SiO₂/Si) с заполнением нанопор диоксидом олова исследовали с помощью рентгеновской дифракции (XRD) на многофункциональном рентгеновском дифрактометре Rigaku SmartLab. Фотолюминесценция измерялась в оптическом диапазоне 320–600 нм с использованием спектрофлуориметра СМ2203 (Solar). Исследование электрических характеристик синтезированных нанопроволок диоксида олова проводилось с использованием патенциостата VersaStat 3 фирмы Ametek.

В результате была получена наногетероструктура SnO₂-НП/SiO₂/Si с орторомбической кристаллической структурой нанопроволок SnO₂. Фотолюминесценция, возбуждаемая светом с длиной волны 240 нм, имеет низкую интенсивность, возникающую в основном за счет таких дефектов, как кислородные вакансии и междоузельное олово или олово поврежденными связями. Измерение ВАХ показало, что полученная таким образом наногетероструктура SnO₂-НП/SiO₂/Si содержит массивы p-n переходов.

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