REVIEW: ELECTRICAL PROPERTIES OF SILICON CARBIDE-BASED COMPOSITE MATERIALS

Silicon carbide (SiC) is a wide-bandgap semiconductor that is widely used in power electronics, automotive industries, and aerospace applications due to its high thermal conductivity and breakdown field. This review examines both the fundamental physics and the practical applications of SiC. We analyze its major crystal structures (polytypes), specifically 4H-SiC, 6H-SiC, and 3C-SiC, and discuss how these structures affect electrical performance. The paper also covers new developments in SiC functional ceramics, metal-matrix nanocomposites, and quantum defects used for quantum information science. By analyzing research literature from 2006 to 2026, we show how the industry transitioned from basic crystal growth to 8-inch wafer manufacturing and automated defect classification using neural networks. Finally, this review discusses the main technical problems that still limit SiC devices, such as high interface trap density (Dit), high contact resistance in p-type doping, and bias temperature instability (BTI). By comparing theoretical material properties with real device performance, this paper identifies key research priorities for the next generation of semiconductor technology.

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