ШОЛУ: КРЕМНИЙ КАРБИДІ (SIC)НЕГІЗІНДЕГІ КОМПОЗИТТІК МАТЕРИАЛДАРДЫҢ ЭЛЕКТРЛІК ҚАСИЕТТЕРІ

Бұл шолу кремний карбиді негізіндегі жүйелердегі электрондық тасымал мен диэлектрлік шығындарды әртүрлі масштабтар деңгейінде кешенді талдауға арналған. Сонымен қатар үш негізгі кристалл түрі қарастырылды: 4H-SiC, 6H-SiC және 3C-SiC. Қуатты құрылғылар үшін ең жақсысы 4H-SiC. Басты мәселе SiC пен SiO₂ арасындағы шекарадағы ақаулар, олар транзисторлардың өткізгіштігін төмендетеді. Сонымен қатар p-типті контактілер жасау және ұзақ жұмыс кезіндегі тұрақтылықты қамтамасыз ету қиын болып қалып отыр. Нанодеңгейде SiC кванттық есептеулерде және сенсорларда қолданылады. Металл және полимер композиттерінде электромагниттік толқындарды жұту және жылудыбөлу үшін пайдаланылады. Жасанды нейрондық желілер 200 мм пластиналардағы ақауларды автоматты түрде анықтауға көмектеседі.

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