ОБЗОР: ЭЛЕКТРИЧЕСКИЕ СВОЙСТВА КОМПОЗИТНЫХ МАТЕРИАЛОВ НА ОСНОВЕ КАРБИДА КРЕМНИЯ

Данный обзор посвящён кросс-масштабному анализу электронного транспорта и диэлектрических потерь в системах на основе карбида кремния; также рассмотрены три основные формы кристалла: 4H-SiC, 6H-SiC и 3C-SiC. Лучшим для мощных устройств считается 4H-SiC. Главная проблема – это дефекты на границе SiC и оксида кремния (SiO₂), которые снижают проводимость транзисторов. Также сложно создавать качественные контакты для p-типа и обеспечивать стабильность при длительной работе. На наноуровне SiC используется в квантовых вычислениях и датчиках. В композитах с металлами и полимерами SiC используется для поглощения электромагнитных волн и теплоотвода. Нейросети помогают автоматически выявлять дефекты на пластинах диаметром 200 мм. Главный вывод: будущее SiC-технологий не в улучшении самого кристалла, а в точном контроле его поверхностей и границ.

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