СИНТЕЗ И ИССЛЕДОВАНИЕ ОПТИЧЕСКИХ, ЭЛЕКТРИЧЕСКИХ СВОЙСТВ НАНОПРОВОЛОК ДИОКСИДА ОЛОВА В ТРЕКОВОМ ТЕМПЛЭЙТЕ SiO₂/Si

Данная работа представляет исследование структурных, оптических и электрических характеристик нанопроволок диоксида олова (SnO₂) полученных методом химического осаждения (ХО) в трековый темплэйт SiO₂/Si (темплэйтный синтез). Латентные треки в слое SiO₂ создавались путем облучения быстрыми тяжелыми ионами (БТИ) Xe при энергии 200 МэВ с флюенсом Ф = 10⁸ см⁻² и последующим травлением в 4% водном растворе фтористоводородной кислоты (HF). Выбранный метод ХО широко распространен для осаждения нанопроволок полупроводниковых оксидов в нанопорах SiO₂. Метод ХО является экономически эффективным, так как не требует специального оборудования для осаждения нанопроволок. Для осуществления осаждения применяется раствор координационного соединения металла и восстановителя. Для анализа заполнения пор после процесса ХО, морфология поверхности образцов исследовалась с помощью сканирующего микроскопа Zeiss Crossbeam 540. Кристаллографическая структура наноструктур SnO₂/SiO₂/Si с заполнением нанопор SnO₂ исследовали методом рентгеновской дифракции. Рентгеноструктурный анализ (РСА) проводят на рентгеновском дифрактометре Rigaku SmartLab. В результате была получена наногетероструктура SnO₂-НП/SiO₂/Si с орторомбической кристаллической структурой нанопроволок SnO₂. Спектры фотолюминесценции (ФЛ) измерялись при возбуждении светом с длиной волны 240 нм с использованием спектрофлуориметра СМ2203 (Solar). Разложение на гауссианы спектра фотолюминесценции структур SnO₂-НП/SiO₂/Si, показали, что они имеют низкую интенсивность, которая обусловлена в основном наличием таких дефектов как кислородные вакансии, междоузельное олово или олово с поврежденными связями. Исследование электрических характеристик проводилось с использованием патенциостата VersaStat 3 (Ametek). Измерение ВАХ показало, что полученная наногетероструктура SnO₂-НП/SiO₂/Si содержит массивы p-n переходов.

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