SiO₂/Si ТРЕКТІК ТЕМПЛЭЙТІНДЕГІ ҚАЛАЙЫ ДИОКСИДІНІҢ НАНОСЫМДАРЫН СИНТЕЗДЕУ ЖӘНЕ ОПТИКАЛЫҚ, ЭЛЕКТРЛІК ҚАСИЕТТЕРІН ЗЕРТТЕУ

Бұл жұмыста SiO₂/Si тректік темплэйтіне химиялық тұндыру (ХТ) әдісі арқылы алынған қалайы диоксиді (SnO₂) наносымдарының (НС) құрылымдық, оптикалық және электрлік сипаттамаларын зерттеу нәтижелері ұсынылған. SiO₂ қабатындағы латентті тректер Ф = 10⁸ см⁻² флюенсте энергиясы 200 МэВ Xe жылдам ауыр иондарымен сәулелендіру және фтор қышқылының (HF) 4% сулы ерітіндісінде өңдеу арқылы жасалды. Таңдалған химиялық тұндыру әдісі SiO₂ нанокеуектерінде жартылай өткізгіш оксид наносымдарын тұндыру үшін кеңінен қолданылады. ХТ әдісі наноөткізгіштерді тұндыру үшін арнайы жабдықты қажет етпейтіндіктен үнемді болып саналады. Тұндыру үшін металдың координациялық қосылысы мен тотықсыздандырғыш ерітіндісі қолданылады. ХТ процесінен кейін кеуектердің толтырылу деңгейін талдау үшін Zeiss Crossbeam 540 сканерлеуші микроскопының көмегімен үлгілердің беттік морфологиясы зерттелді. SnO₂ нанокеуектерімен толтырылған SnO₂/SiO₂/Si наноқұрылымдарының кристаллографиялық құрылымы рентгендік дифракция әдісі арқылы зерттелді. Рентгендік құрылымдық талдау (XRD) Rigaku SmartLab рентгендік дифрактометрінде жүргізілді. Нәтижесінде SnO₂ наносымдарының орторомбты кристалдық құрылымы бар SnO₂-НС/SiO₂/Si наногетероқұрылымы алынды. Фотолюминесценция (ФЛ) спектрлері CM2203 спектрофлюориметрі (Solar) көмегімен 240 нм толқын ұзындығындағы жарықпен қоздыру арқылы өлшенді. SnO₂-НС/SiO₂/Si құрылымдарының фотолюминесценция спектрінің гауссқа жіктелуі олардың интенсивтілігінің төмен екенін көрсетті, бұл негізінен оттегінің вакансиялары, түйінаралық қалайы немесе байланыстары бұзылған қалайы сияқты ақаулардың болуына байланысты. VersaStat 3 потенциостатының (Ametek) көмегімен алынған үлгілердің электрлік сипаттамасы зерттелді. Вольт-амперлік сипаттамаларды өлшеу, алынған SnO₂-НС/SiO₂/Si наногетероқұрылымында p-n ауысымының массивтері бар екенін көрсетті.

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