ОСОБЕННОСТИ ЛЮМИНЕСЦЕНЦИИ КРИСТАЛЛОВ CsI:Tl ОБЛУЧЕННЫХ БЫСТРЫМИ ИОНАМИ Xe

Сцинтилляционные кристаллы CsI:Tl широко используются в экспериментах по ядерной физике и физике высоких энергий. В настоящей работе проведено исследование и анализ люминесцентных свойств кристаллов CsI:T1, вызванных облучением ионами ¹³²Xe с энергией 230 МэВ, до флюенсов (1·10¹¹–1·10¹⁴ ион/см² ) при 295 К (ускоритель ДЦ-60, Астана, Казахстан). Исследование проводилось методами оптической абсорбционной и люминесцентной спектроскопии, также времени-разрешенной оптически стимулированной люминесценции. Поверхность исследовалась с помощью атомно-силовой микроскопии. Установлено уменьшение интенсивности сцинтилляционной полосы свечения 553 нм и ее светового выхода с увеличением флюенса. Конверсионная эффективность для исследованных образцов не зависит от флюенса. Таким образом радиационное повреждение не влияет на конверсионную эффективность кристалла CsI:Tl. Формирование треков не снижают конверсионную эффективность кристалла CsI:Tl, но участвуют в сцинтилляционном процессе, вызывая реабсорбцию энергии от Tl+ -центров, что приводит к деградации светового выхода.

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