ЖЫЛДАМ Xe ИОНДАРМЕН СӘУЛЕЛЕНГЕН CsI:Tl КРИСТАЛДАРЫНЫҢ ЛЮМИНЕСЦЕНЦИЯ ЕРЕКШЕЛІКТЕРІ

Сцинтилляциялық CsI:Tl кристалдары ядролық физика және жоғары энергиялар физикасы бойынша эксперименттерде кеңінен қолданылады. Бұл жұмыста CsI:Tl кристалдарының люминесценция қасиеттері зерттеліп, талданды, олар 230 МэВ ₁₃₂Xe иондарымен сәулелену нәтижесінде (1·10¹¹–1·10¹⁴ ион/см² флюенстері кезінде) 295 K температурасында зерттелді (Астана қаласындағы ДЦ-60 үдеткіші). Зерттеу оптикалық абсорбция және люминесценция спектроскопиясы әдістерімен, сондай-ақ уақытпен шешілетін оптикалық стимулденген люминесценция әдісімен жүргізілді. Беткі қабаты атом-күштік микроскопия көмегімен зерттелді. Сцинтилляциялық 553 нм толқын ұзындығындағы жарық шығару интенсивтілігінің және оның жарық шығу коэффициентінің флюенс ұлғаюымен төмендегені анықталды. Зерттелген үлгілердің конверсиялық тиімділігі флюенске тәуелсіз. Демек, радиациялық зақымдану CsI:Tl кристалының конверсиялық тиімділігіне әсер етпейді. Тректердің түзілуі CsI:Tl кристалының конверсиялық тиімділігін төмендетпейді, бірақ сцинтилляциялық процеске қатысады, Tl+ орталықтарынан энергияның қайта жұтылуы арқылы, бұл жарық шығудың төмендеуіне әкеледі.

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